Electron g-factor determined for quantum dot circuit fabricated from (110)-oriented GaAs quantum well

Effect of asymmetric quantum dot rings in electron transport through a quantum wire

The electronic conductance at zero temperature through a quantum wire with side-connected asymmetric quantum ring (as a scatter system) is theoretically studied using the non-interacting Hamiltonian Anderson tunneling method. In this paper we concentrate on the configuration of the quantum dot rings. We show that the asymmetric structure of QD-scatter system strongly influences the amplitude an...

Electron spin polarization induced by linearly polarized light in a (110) GaAs quantum-well waveguide.

We report an experimental demonstration of generating electron spin polarization with linearly polarized light in a (110) GaAs quantum well. A detailed frequency-domain pump-probe study shows that the dynamic nuclear spin polarization arising from the oriented electron spins results in a strong dependence of the electron spin splitting on the photon energy and intensity of the linearly polarize...

Effect of asymmetric quantum dot rings in electron transport through a quantum wire

The electronic conductance at zero temperature through a quantum wire with side-connected asymmetric quantum ring (as a scatter system) is theoretically studied using the non-interacting Hamiltonian Anderson tunneling method. In this paper we concentrate on the configuration of the quantum dot rings. We show that the asymmetric structure of QD-scatter system strongly influences the amplitude an...

Spin relaxation in GaAs(110) quantum wells

Monolithic Passively Mode-Locked Lasers using Quantum Dot or Quantum Well Materials Grown on GaAs Substrates

In this work, the optical characteristics of monolithic passively mode-locked lasers (MLLs) fabricated from 1.24-μm InAs dots-in-a-Well (DWELL), 1.25-μm InGaAs single quantum well (SQW), and 1.55-μm GaInNAsSb SQW structures grown using elemental source molecular beam epitaxy (MBE) are reported. 5 GHz optical pulses with subpicosecond RMS jitter, high pulse peak power (1W) and narrow pulse width...